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BSC032NE2LS 데이터시트(PDF) 1 Page - Infineon Technologies AG |
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BSC032NE2LS 데이터시트(HTML) 1 Page - Infineon Technologies AG |
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1 / 10 page ![]() BSC032NE2LS OptiMOSTM Power-MOSFET Features • Optimized for high performance Buck converter • Very low on-resistance R DS(on) @ V GS=4.5 V • 100% avalanche tested • Superior thermal resistance • N-channel • Qualified according to JEDEC 1) for target applications • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D V GS=10 V, T C=25 °C 84 A V GS=10 V, T C=100 °C 53 V GS=4.5 V, T C=25 °C 68 V GS=4.5 V, T C=100 °C 43 V GS=10 V, T A=25 °C, R thJA=50 K/W 2) 22 Pulsed drain current 3) I D,pulse T C=25 °C 336 Avalanche current, single pulse 4) I AS T C=25 °C 45 Avalanche energy, single pulse E AS I D=20 A, R GS=25 W 20 mJ Gate source voltage V GS ±20 V Value 1) J-STD20 and JESD22 PG-TDSON-8 Type Package Marking BSC032NE2LS PG-TDSON-8 032NE2LS V DS 25 V R DS(on),max 3.2 m W I D 84 A Q OSS 9.4 nC Q G(0V..10V) 16 nC Product Summary Rev. 2.2 page 1 2013-04-29 |
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