| 전자부품 데이터시트 검색엔진 |
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BSP372N 데이터시트(PDF) 7 Page - Infineon Technologies AG |
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BSP372N 데이터시트(HTML) 7 Page - Infineon Technologies AG |
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7 / 9 page ![]() BSP372N 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=1.8 A pulsed parameter: T j(start) parameter: V DD 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=250 µA 80 84 88 92 96 100 104 108 112 116 120 -60 -20 20 60 100 140 180 T j [°C] 20 V 50 V 80 V 0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7 8 9 10 Q gate [nC] 25 °C 100 °C 125 °C 100 101 102 103 10-1 100 101 t AV [µs] V GS Q gate V gs(th) Q g(th) Q gs Q gd Q sw Q g Rev 2.0 page 7 2013-04-03 |
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