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BT151F-800 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BT151F-800 데이터시트(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Thyristors BT151F-800 DESCRIPTION · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation · In a full package ,plastic envelope APPLICATIONS · BT151F series is intended for use in applications requiring high Bidirectional blocking voltage capability and high thermal cycling performance ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT VDRM Repetitive peak off-state voltage 800 V VRRM Repetitive peak reverse voltage 800 V IT(AV) On-state current Tc=80℃ 5.7 A ITSM Surge non-repetitive on-state current Tp=10ms 100 A PG(AV) Average gate power 0.5 W di/dt Repetitive rate of rise of on-state current after triggering Tj=125℃ 50 A/us I2t I2t for fusing t = 10 ms 50 A2S IGM Peak gate current tp=20us ,Tj=125℃ 2 A Tj Operating Junction temperature 125 ℃ Tstg Storage temperature -40 ~+150 ℃ |
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