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74LVC07ADR2G 데이터시트(PDF) 4 Page - ON Semiconductor

부품명 74LVC07ADR2G
상세설명  Low-Voltage CMOS Hex Buffer
PDF  7 Pages
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제조업체  ONSEMI [ON Semiconductor]
홈페이지  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

74LVC07ADR2G 데이터시트(HTML) 4 Page - ON Semiconductor

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DC ELECTRICAL CHARACTERISTICS
Symbol
Unit
−40 to +125
5C
−40 to +85
5C
Conditions
Parameter
Symbol
Unit
Max
Typ
(Note 4)
Min
Max
Typ
(Note 4)
Min
Conditions
Parameter
ICC
Supply current
VI = VCC or GND; IO = 0 A;
VCC = 5.5 V
−
0.1
10
−
0.1
40
mA
DICC
Additional supply current
per input pin; VI = VCC − 0.6 V;
IO = 0 A; VCC = 2.7 V to 5.5 V
−
5
500
−
5
5000
mA
4. All typical values are measured at TA = 25°C and VCC = 3.3 V, unless stated otherwise.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
AC ELECTRICAL CHARACTERISTICS (tR = tF = 2.5 ns)
Symbol
Parameter
Conditions
−40 to +85
5C
−40 to +125
5C
Unit
Min
Typ
(Note 5)
Max
Min
Typ
(Note 5)
Max
tpZL
OFF−state to LOW
propagation delay
An to On
VCC = 1.2 V
−
8.0
−
−
−
−
ns
VCC = 1.65 V to 1.95 V
0.5
1.7
5.5
0.5
−
6.5
VCC = 2.3 V to 2.7 V
0.5
1.2
2.8
0.5
−
3.5
VCC = 2.7 V
0.5
1.8
3.3
0.5
−
4.5
VCC = 3.0 V to 3.6 V
0.5
1.2
3.6
0.5
−
4.5
VCC = 4.5 V to 5.5 V
0.5
1.6
2.6
0.5
−
3.5
tpLZ
LOW to OFF−state
propagation delay
An to On
VCC = 1.2 V
−
10.0
−
−
−
−
ns
VCC = 1.65 V to 1.95 V
0.5
3.0
5.5
0.5
−
6.5
VCC = 2.3 V to 2.7 V
0.5
1.7
2.8
0.5
−
3.5
VCC = 2.7 V
0.5
2.1
3.3
0.5
−
4.5
VCC = 3.0 V to 3.6 V
0.5
2.5
3.6
0.5
−
4.5
VCC = 4.5 V to 5.5 V
0.5
1.6
2.6
−
−
3.5
5. Typical values are measured at TA = 25°C and VCC = 3.3 V, unless stated otherwise.
DYNAMIC SWITCHING CHARACTERISTICS
Symbol
Characteristic
Condition
Min
Typ
Max
Unit
VOLP
Dynamic LOW Peak Voltage (Note 6)
VCC = 3.3 V, CL = 50 pF, VIH = 3.3 V, VIL = 0 V
VCC = 2.5 V, CL = 30 pF, VIH = 2.5 V, VIL = 0 V
0.8
0.6
V
VOLV
Dynamic LOW Valley Voltage (Note 6)
VCC = 3.3 V, CL = 50 pF, VIH = 3.3 V, VIL = 0 V
VCC = 2.5 V, CL = 30 pF, VIH = 2.5 V, VIL = 0 V
−0.8
−0.6
V
6. Number of outputs defined as “n”. Measured with “n−1” outputs switching from HIGH−to−LOW or LOW−to−HIGH. The remaining output is
measured in the LOW state.
CAPACITIVE CHARACTERISTICS (TA = +25°C)
Symbol
Parameter
Condition
Typical
Unit
CIN
Input Capacitance
VCC = 3.3 V, VI = 0 V or VCC
5.0
pF
COUT
Output Capacitance
VCC = 3.3 V, VI = 0 V or VCC
6.0
pF
CPD
Power Dissipation Capacitance (Note 7)
Per input; VI = GND or VCC
pF
VCC = 1.65 V to 1.95 V
6.5
VCC = 2.3 V to 2.7 V
6.9
VCC = 3.0 V to 3.6 V
7.2
7. CPD is used to determine the dynamic power dissipation (PD in mW)
PD = CPD * VCC2 x fi * N + L (CL x VCC2 x fo) where:
fi = input frequency in MHz; fo = output frequency in MHz
CL = output load capacitance in pF VCC = supply voltage in Volts
N = number of outputs switching L (CL * VCC2)



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