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IPN50R2K0CE 데이터시트(PDF) 1 Page - Infineon Technologies AG |
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IPN50R2K0CE 데이터시트(HTML) 1 Page - Infineon Technologies AG |
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1 / 13 page ![]() 1 IPN50R2K0CE Rev.2.1,2016-06-13 Final Data Sheet PG-SOT223 Drain Pin 2 Gate Pin 1 Source Pin 3 MOSFET 500VCoolMOSªCEPowerTransistor CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™CEisa price-performanceoptimizedplatformenablingtotargetcostsensitive applicationsinConsumerandLightingmarketsbystillmeetinghighest efficiencystandards.Thenewseriesprovidesallbenefitsofafast switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand offeringthebestcostdownperformanceratioavailableonthemarket. Features •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •Pb-freeplating,Halogenfreemoldcompound •Qualifiedforstandardgradeapplications Applications Adapter,ChargerandLighting Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseperatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 550 V RDS(on),max 2 Ω ID 3.6 A Qg.typ 6 nC ID,pulse 6.1 A Eoss@400V 0.62 µJ Type/OrderingCode Package Marking RelatedLinks IPN50R2K0CE PG-SOT223 50S2K0 see Appendix A |
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