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STL7N6F7 데이터시트(PDF) 1 Page - STMicroelectronics |
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STL7N6F7 데이터시트(HTML) 1 Page - STMicroelectronics |
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1 / 11 page ![]() August 2015 DocID028257 Rev 1 1/11 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. www.st.com STL7N6F7 N-channel 60 V, 0.021 Ω typ., 7 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 2x2 package Datasheet - preliminary data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max ID STL7N6F7 60 V 0.025 Ω 7 A Among the lowest RDS(on) on the market Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Applications Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Table 1: Device summary Order code Marking Package Packing STL7N6F7 ST7N PowerFLAT™ 2x2 Tape and reel 1 2 3 6 5 4 1 2 3 PowerFLA T™ 2x2 1(D) 2(D) 3(G) 6(D) 5(D) 4(S) D S AM11269v1 Bottom view |
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