STL33N60DM2 datasheet(4/15 Pages) STMICROELECTRONICS

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Electrical characteristics

STL33N60DM2

4/15

DocID026781 Rev 2

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4: On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

VGS = 0, ID = 1 mA

600

IDSS

Zero gate voltage

drain current

VGS = 0, VDS = 600 V

µA

VGS = 0,

VDS = 600 V, TC=125 °C

(1)

100

µA

IGSS

Gate-body leakage

current

VDS = 0, VGS = ± 25 V

±10

µA

VGS(th)

Gate threshold

voltage

VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source

on- resistance

VGS = 10 V, ID = 10.5 A

0.115

0.140

Ω

Notes:

(1)

Defined by design, not subject to production test.

Table 5: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 100 V, f = 1 MHz,

VGS = 0

1870

Coss

Output capacitance

Crss

Reverse transfer

capacitance

Coss eq.

(1)

Equivalent output

capacitance

VDS = 0 to 480 V, VGS = 0

157

Intrinsic gate

resistance

f = 1 MHz, ID=0 A

4.5

Ω

Total gate charge

VDD = 480 V, ID = 21 A

VGS = 10 V

(see Figure 15: "Gate

charge test circuit")

Qgs

Gate-source charge

9.8

Qgd

Gate-drain charge

21.4

Notes:

(1)

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS.

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