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STM8S903K3 데이터시트(PDF) 70 Page - STMicroelectronics

부품명 STM8S903K3
상세설명  16 MHz STM8S 8-bit MCU, up to 8 Kbytes Flash, 1 Kbyte RAM, 640 bytes EEPROM,10-bit ADC, 2 timers, UART, SPI, IC
PDF  121 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM8S903K3 데이터시트(HTML) 70 Page - STMicroelectronics

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Electrical characteristics
STM8S903K3 STM8S903F3
70/121
DocID15590 Rev 10
10.3.5
Memory characteristics
RAM and hardware registers
Flash program memory/data EEPROM memory
Table 38. RAM and hardware registers
Symbol
Parameter
Conditions
Min
Unit
VRM
Data retention mode(1)
1. Minimum supply voltage without losing data stored in RAM (in halt mode or under reset) or in hardware
registers (only in halt mode). Guaranteed by design, not tested in production.
Halt mode (or reset)
VIT-max(2)
2. Refer to Section 10.3: Operating conditions for the value of VIT-max.
V
Table 39. Flash program memory/data EEPROM memory
Symbol
Parameter
Conditions
Min(1)
1. Data based on characterization results, not tested in production.
Typ
Max
Unit
VDD
Operating voltage
(all modes, execution/write/erase)
fCPU≤ 16 MHz
2.95
-
5.5
V
tprog
Standard programming time (including
erase) for byte/word/block
(1 byte/4 bytes/64 bytes)
--
6
6.6
ms
Fast programming time for 1 block
(64 bytes)
--
3
3.33
terase
Erase time for 1 block (64 bytes)
-
-
3
3.33
tRET
Data retention (program and data
memory) after 10k erase/write cycles
at TA= +55 °C
TRET = 55 °C
20
-
-
year
Data retention (data memory) after
300k erase/write cycles at
TA= +125°C
TRET = 85 °C
1
-
-
IDD
Supply current (Flash programming or
erasing for 1 to 128 bytes)
--
2
-
mA



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