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STM32F318C8 데이터시트(PDF) 59 Page - STMicroelectronics |
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STM32F318C8 데이터시트(HTML) 59 Page - STMicroelectronics |
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59 / 125 page ![]() DocID026294 Rev 5 59/125 STM32F318C8 STM32F318K8 Electrical characteristics 107 Figure 12. Typical VBAT current consumption (LSE and RTC ON/LSEDRV[1:0] = ‘00’) Table 28. Typical and maximum current consumption from VBAT supply Symbol Para meter Conditions (1) Typ.@VBAT Max. @VBAT= 3.6V (2) TA (°C) Unit 1.65V 1.8V 2V 2.4V 2.7V 3V 3.3V 3.6V 25 85 105 IDD_VBAT Backup domain supply current LSE & RTC ON; “Xtal mode” lower driving capability; LSEDRV[1: 0] = '00' 0.41 0.43 0.46 0.54 0.59 0.66 0.74 0.82 - - - µA LSE & RTC ON; “Xtal mode” higher driving capability; LSEDRV[1: 0] = '11' 0.65 0.68 0.73 0.80 0.87 0.95 1.03 1.14 - - - 1. Crystal used: Abracon ABS07-120-32.768 kHz-T with a CL of 6 pF for typical values. 2. Data based on characterization results, not tested in production. |
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