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STM32F318C8 데이터시트(PDF) 107 Page - STMicroelectronics |
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STM32F318C8 데이터시트(HTML) 107 Page - STMicroelectronics |
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107 / 125 page ![]() DocID026294 Rev 5 107/125 STM32F318C8 STM32F318K8 Electrical characteristics 107 6.3.22 Temperature sensor characteristics 6.3.23 VBAT monitoring characteristics Table 67. TS characteristics Symbol Parameter Min Typ Max Unit TL(1) 1. Guaranteed by design, not tested in production. VSENSE linearity with temperature - 1 2°C Avg_Slope(1) Average slope 4.0 4.3 4.6 mV/°C V25 Voltage at 25 °C 1.34 1.43 1.52 V tSTART(1) Startup time 4 - 10 µs TS_temp(1)(2) 2. Shortest sampling time can be determined in the application by multiple iterations. ADC sampling time when reading the temperature 2.2 - - µs Table 68. Temperature sensor calibration values Calibration value name Description Memory address TS_CAL1 TS ADC raw data acquired at temperature of 30 °C, VDDA= 3.3 V 0x1FFF F7B8 - 0x1FFF F7B9 TS_CAL2 TS ADC raw data acquired at temperature of 110 °C VDDA= 3.3 V 0x1FFF F7C2 - 0x1FFF F7C3 Table 69. VBAT monitoring characteristics Symbol Parameter Min Typ Max Unit R Resistor bridge for VBAT -50 - K Q Ratio on VBAT measurement - 2 - Er(1) 1. Guaranteed by design, not tested in production. Error on Q -1 - +1 % TS_vbat(1)(2) 2. Shortest sampling time can be determined in the application by multiple iterations. ADC sampling time when reading the VBAT 1mV accuracy 2.2 - - µs |
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