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LM2889 데이터시트(PDF) 2 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
부품명 LM2889
상세설명  LM2889 TV Video Modulator
PDF  10 Pages
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제조업체  NSC [National Semiconductor (TI)]
홈페이지  http://www.national.com
Logo NSC - National Semiconductor (TI)

LM2889 데이터시트(HTML) 2 Page - National Semiconductor (TI)

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Absolute Maximum Ratings
If MilitaryAerospace specified devices are required
please contact the National Semiconductor Sales
OfficeDistributors for availability and specifications
Supply Voltage
18VDC
Power Dissipation Package (Note 1)
700 mW
Operating Temperature Range
0 Cto a70 C
Storage Temperature Range
b
55 Cto a150 C
(V14 – V13) Max
g
5VDC
(V12 – V8) Max
7VDC
(V12 – V9) Max
7VDC
Lead Temperature (Soldering 10 seconds)
260 C
DC Electrical Characteristics
(DC test circuit all switches normally pos 1 VSe12V VAe2V VBeVCe10V)
Parameter
Conditions
Min
Typ
Max
Units
Supply Current IS
10
16
25
mA
Sound Oscillator Current DI13
Change VA from b2V to a2V
02
035
06
mA
Sound Oscillator Zener Current I13
085
mA
Sound Modulator Audio Current DI13
Change SW2 from Pos 1 to Pos 2
09
mA
Video Clamp Voltage V2
Unloaded
50
525
55
VDC
Loaded
SW3 Pos 3
51
VDC
Video Clamp Capacitor Discharge
SW3 Pos 2
20
m
A
Current (VS–V2)105
Ch A Oscillator OFF Voltage V6 V7
SW1 Pos 2
2
mVDC
Ch A Oscillator Current Level I7
VBe10V VCe11V
25
35
50
mA
Ch B Oscillator OFF Voltage V4 V5
2
mVDC
Ch B Oscillator Current Level I4
SW1 Pos 2 VBe10V VCe11V
25
35
50
mA
Ch A Modulator Conversion Ratio
Measure DV9 by Changing from
D
V9(V11-V10)
VBe10V VCe11V to VBe11V
03
050
075
VV
VCe10V Divide by V11–V10
Ch B Modulator Conversion Ratio
SW1 Pos 2 Measure DV8 by
D
V8(V11 – V10)
Changing from VBe10V VCe11V
03
050
075
VV
to VBe11V VCe10V Divide by
V11 – V10
AC Electrical Characteristics (AC test circuit VSe12V)
Parameter
Conditions
Min
Typ
Max
Units
Sound Carrier Oscillator Level V
Vpp
Sound Modulator Deviation
D
f DVIN SW Pos
Change VIN from
V
HzmV
to
V Measure Df at Pin
Divide as Shown
Ch
RF Oscillator Level n
n
Ch Sw Pos
fe
MHz Use FET Probe
mVpp
Ch
RF Oscillator Level n
n
Ch Sw Pos
fe
MHz Use FET Probe
mVpp
RF Modulator Conversion Gain nOUT V
V
Ch Sw Pos
fe
MHz Note
mVrmsV
Note 1
For operation in ambient temperatures above 25 C the device must be derated based on a 150 C maximum junction temperature and a thermal resistance
of 80 CW junction to ambient
Note 2
Conversion gain shown is measured with 75X input RF meter which makes the AC RF output load 375X
2



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