2SD108 datasheet(1/2 Pages) ISC

부품명	2SD108

상세설명	Silicon NPN Darlingtion Power Transistor

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제조업체	ISC [Inchange Semiconductor Company Limited]

홈페이지	http://www.iscsemi.cn

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INCHANGE Semiconductor

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isc Silicon NPN Darlingtion Power Transistor

2SD108

DESCRIPTION

·

High DC current gain-

: hFE = 2000 (Min) @ IC = 1A

·

Collector-Emitter Sustaining Voltage-

: VCEO(SUS)=80V(Min)

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·

Power switching

·

Hammer drivers

·

Series and shunt regulator

·

Audio amplifiers

ABSOLUTE MAXIMUM RATINGS(TC=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

80

V

VCEO

Collector-Emitter Voltage

80

V

VEBO

Emitter-Base Voltage

10

V

IC

Collector Current -Continuous

5

A

ICP

Collector Current-Peak

10

A

IB

Base Current

0.12

A

PC

Collector Power Dissipation@TC=25℃

50

W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-65~150

℃

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2SD108 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited

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