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STM32F412RG 데이터시트(PDF) 105 Page - STMicroelectronics |
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STM32F412RG 데이터시트(HTML) 105 Page - STMicroelectronics |
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105 / 193 page ![]() DocID028087 Rev 4 105/193 STM32F412xE/G Electrical characteristics 161 possible to the oscillator pins in order to minimize output distortion and startup stabilization time. Refer to the crystal resonator manufacturer for more details on the resonator characteristics (frequency, package, accuracy). The LSE high-power mode allows to cover a wider range of possible crystals but with a cost of higher power consumption. Note: For information on selecting the crystal, refer to the application note AN2867 “Oscillator design guide for ST microcontrollers” available from the ST website www.st.com. For information about the LSE high-power mode, refer to the reference manual RM0383. Figure 30. Typical application with a 32.768 kHz crystal Table 41. LSE oscillator characteristics (fLSE = 32.768 kHz) (1) 1. Guaranteed by design, not tested in production. Symbol Parameter Conditions Min Typ Max Unit RF Feedback resistor - - 18.4 - M Ω IDD LSE current consumption Low-power mode (default) -- 1 µA High-drive mode - - 3 ACCLSE(2) 2. This parameter depends on the crystal used in the application. Refer to the application note AN2867. LSE accuracy - -500 - 500 ppm Gm_crit_max Maximum critical crystal gm Startup, low-power mode -- 0.56 µA/V Startup, high-drive mode -- 1.50 tSU(LSE)(3) 3. tSU(LSE) is the startup time measured from the moment it is enabled (by software) to a stabilized 32.768 kHz oscillation is reached. This value is guaranteed by characterization and not tested in production. It is measured for a standard crystal resonator and it can vary significantly with the crystal manufacturer. startup time VDD is stabilized - 2 - s |
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