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STM32F479AI 데이터시트(PDF) 171 Page - STMicroelectronics |
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STM32F479AI 데이터시트(HTML) 171 Page - STMicroelectronics |
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171 / 217 page ![]() DocID028010 Rev 3 171/217 STM32F479xx Electrical characteristics 190 Synchronous waveforms and timings Figures 63 through 66 represent synchronous waveforms and Table 96 through Table 99 provide the corresponding timings. The results shown in these tables are obtained with the following FMC configuration: • BurstAccessMode = FMC_BurstAccessMode_Enable; • MemoryType = FMC_MemoryType_CRAM; • WriteBurst = FMC_WriteBurst_Enable; • CLKDivision = 1; • DataLatency = 1 for NOR Flash; DataLatency = 0 for PSRAM • CL = 30 pF on data and address lines. CL = 10 pF on FMC_CLK unless otherwise specified. In all timing tables, the THCLK is the HCLK clock period: • For 2.7 V≤ VDD≤ 3.6 V, maximum FMC_CLK = 90 MHz at CL = 30 pF (on FMC_CLK). • For 1.71 V≤ VDD<1.9 V, maximum FMC_CLK = 60 MHz at CL = 10 pF (on FMC_CLK). Table 95. Asynchronous multiplexed PSRAM/NOR write-NWAIT timings(1) 1. Based on test during characterization. Symbol Parameter Min Max Unit tw(NE) FMC_NE low time 9THCLK 9THCLK+0.5 ns tw(NWE) FMC_NWE low time 7THCLK 7THCLK+2 tsu(NWAIT_NE) FMC_NWAIT valid before FMC_NEx high 6THCLK+1.5 - th(NE_NWAIT) FMC_NEx hold time after FMC_NWAIT invalid 4THCLK–1 - |
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