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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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STM32L475RG 데이터시트(PDF) 120 Page - STMicroelectronics |
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STM32L475RG 데이터시트(HTML) 120 Page - STMicroelectronics |
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120 / 193 page  Electrical characteristics STM32L475xx 120/193 DocID027692 Rev 2 Figure 18. Typical current consumption versus MSI frequency Low-speed internal (LSI) RC oscillator 6.3.9 PLL characteristics The parameters given in Table 51 are derived from tests performed under temperature and VDD supply voltage conditions summarized in Table 22: General operating conditions. Table 50. LSI oscillator characteristics(1) Symbol Parameter Conditions Min Typ Max Unit fLSI LSI Frequency VDD = 3.0 V, TA = 30 °C 31.04 - 32.96 kHz VDD = 1.62 to 3.6 V, TA = -40 to 125 °C 29.5 - 34 tSU(LSI)(2) LSI oscillator start- up time -- 80 130 μs tSTAB(LSI)(2) LSI oscillator stabilization time 5% of final frequency - 125 180 μs IDD(LSI)(2) LSI oscillator power consumption -- 110 180 nA 1. Guaranteed by characterization results. 2. Guaranteed by design. |
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