STM32L475RG datasheet(124/193 Pages) STMICROELECTRONICS

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Electrical characteristics

STM32L475xx

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Prequalification trials

Most of the common failures (unexpected reset and program counter corruption) can be

reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1

second.

To complete these trials, ESD stress can be applied directly on the device, over the range of

specification values. When unexpected behavior is detected, the software can be hardened

to prevent unrecoverable errors occurring (see application note AN1015).

Electromagnetic Interference (EMI)

The electromagnetic field emitted by the device are monitored while a simple application is

executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with

IEC 61967-2 standard which specifies the test board and the pin loading.

6.3.12

Electrical sensitivity characteristics

Based on three different tests (ESD, LU) using specific measurement methods, the device is

stressed in order to determine its performance in terms of electrical sensitivity.

Electrostatic discharge (ESD)

Electrostatic discharges (a positive then a negative pulse separated by 1 second) are

applied to the pins of each sample according to each pin combination. The sample size

depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test

conforms to the ANSI/JEDEC standard.

Table 55. EMI characteristics

Symbol

Parameter

Conditions

Monitored

frequency band

Max vs.

[fHSE/fHCLK]

Unit

Max vs.

[fHSE = 8 MHz /

fHCLK = 80 MHz]

SEMI

Peak level

VDD = 3.6 V, TA = 25 °C,

LQFP100 package

compliant with

IEC 61967-2

0.1 MHz to 30 MHz

-2

dBµV

30 MHz to 130 MHz

-9

130 MHz to 1 GHz

EMI Level

3.5

Table 56. ESD absolute maximum ratings

Symbol

Ratings

Conditions

Class

Maximum

value(1)

1. Guaranteed by characterization results.

Unit

VESD(HBM)

Electrostatic discharge

voltage (human body model)

TA = +25 °C, conforming

to ANSI/ESDA/JEDEC

JS-001

2000

VESD(CDM)

Electrostatic discharge

voltage (charge device

model)

TA = +25 °C,

conforming to ANSI/ESD

STM5.3.1

250

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