©2013 Silicon Storage Technology, Inc.

DS70005050B

9/14

Data Sheet

www.microchip.com

Features

• Small package size

– 16-contact XQFN (3mm x 3mm x 0.5mm max thick-

ness)

• Operating voltage

• High linear output power across 5.1-5.9 GHz @ 5V:

– 802.11a OFDM Spectrum mask compliant up to 25

dBm typically

– 802.11n HT20 OFDM Spectrum mask compliant up to 24.5

dBm typically

– 3% EVM up to 21.5 dBm, typically for 802.11a, 54 Mbps sig-

nal

– 2.5% EVM up to 20 dBm, typically for 802.11n, MCS7,

40 MHz BW signal

– 1.8% EVM up to 19 dBm, typically for 802.11ac, MCS9,

80 MHz BW signal

• High power-added efficiency/low operating current

for 54 Mbps 802.11a applications

• Gain:

– Typically 30 dB gain across band 5.1-5.9 GHz

• Idle current

• High speed power-up/-down

– Turn on/off time (10%~90%) <100 ns

• Low shut-down current (~1 µA)

• On-chip power detection

– 20 dB linear dynamic range

•50

 on-chip input match and simple output match

• All lead-free devices are RoHS compliant

Applications

• WLAN (IEEE 802.11a/n/ac)

• HyperLAN2

• Multimedia

5.1-5.9 GHz High-Linearity Power Amplifier

SST11CP16

SST11CP16 is a versatile power amplifier based on the highly-reliable InGaP/

GaAs HBT technology. It is easily configured for high-linearity, high-efficiency

applications, with superb power-added efficiency, while operating over operating

over the 5.1-5.9 GHz frequency band. SST11CP16 has the excellent linearity

required by the 802.11a/n/ac applications. SST11CP16 provides 19 dBm with

less than 1.8% EVM using 802.11ac modulation, with 80 MHz bandwidths and

351 Mbps data rate. It meets 802.11a spectrum mask requirements at 25 dBm

and 802.11n HT20 spectrum mask at 24.5 dBm. This power amplifier also fea-

tures easy, board-level usage along with high-speed power-up/-down control

through a single reference voltage pin. SST11CP16 is offered in a 16-contact

XQFN package with 0.5mm maximum thickness.