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STGD6M65DF2 데이터시트(PDF) 3 Page - STMicroelectronics

부품명 STGD6M65DF2
상세설명  Trench gate field-stop IGBT, M series 650 V, 6 A low loss
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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STGD6M65DF2 데이터시트(HTML) 3 Page - STMicroelectronics

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STGD6M65DF2
Electrical ratings
DocID028703 Rev 3
3/20
1
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
Unit
VCES
Collector-emitter voltage (VGE = 0 V)
650
V
IC
Continuous collector current at TC = 25 °C
12
A
Continuous collector current at TC = 100 °C
6
A
ICP(1)
Pulsed collector current
24
A
VGE
Gate-emitter voltage
±20
V
IF
Continuous forward current at TC = 25 °C
12
A
Continuous forward current at TC = 100 °C
6
A
IFP (1)
Pulsed forward current
24
A
PTOT
Total dissipation at TC = 25 °C
88
W
TSTG
Storage temperature range
- 55 to 150
°C
TJ
Operating junction temperature range
- 55 to 175
°C
Notes:
(1)Pulse width limited by maximum junction temperature.
Table 3: Thermal data
Symbol
Parameter
Value
Unit
RthJC
Thermal resistance junction-case IGBT
1.7
°C/W
RthJC
Thermal resistance junction-case diode
5
°C/W
RthJA
Thermal resistance junction-ambient
100
°C/W



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