March 2016

DocID029083 Rev 1

1/16

This is information on a product in full production.

www.st.com

STGW10M65DF2

Trench gate field-stop IGBT, M series 650 V, 10 A low loss

Datasheet - production data

Figure 1: Internal schematic diagram

Features



6 µs of short-circuit withstand time





Tight parameter distribution



Safer paralleling



Low thermal resistance



Soft and very fast recovery antiparallel diode

Applications



Motor control



UPS



PFC

Description

This device is an IGBT developed using an

advanced proprietary trench gate field-stop

structure. The device is part of the M series of

IGBTs, which represent an optimum compromise

in performance to maximize the efficiency of

inverter systems where low-loss and short-circuit

capability are essential. Furthermore, a positive

parameter distribution result in safer paralleling

operation.

Table 1: Device summary

Order code

Marking

Package

Packing

STGW10M65DF2

G10M65DF2

TO-247

Tube

TO-247

1

2

3