Application information

TSB611

18/24

DocID028074 Rev 1

The long term drift parameter (ΔV

the calculated number of months (Equation 7).

Equation 7

stress duration.

3.6

ESD structure of TSB611

The TSB611 is protected against electrostatic discharge (ESD) with dedicated diodes (see

Figure 35). These diodes must be considered at application level especially when signals

the diodes must be limited to a maximum of 10 mA as stated in Table 1. A serial resistor or

a Schottky diode can be used on the inputs to improve protection but the 10 mA limit of

input current must be strictly observed.

Figure 35: ESD structure

∆V

io

V

month s

=

TSB611

+

-