Application information

TSU111

22/30

DocID029790 Rev 2

5.8

ESD structure of the TSU111

The TSU111 is protected against electrostatic discharge (ESD) with dedicated diodes

(see Figure 36: "ESD structure"). These diodes must be considered at application level

Figure 36: ESD structure

Current through the diodes must be limited to a maximum of 10 mA as stated in Table 1:

"Absolute maximum ratings (AMR)". A serial resistor on the inputs can be used to limit this

current.

5.9

EMI robustness of nanopower devices

Nanopower devices exhibit higher impedance nodes and consequently they are more

sensitive to EMI. To improve the natural robustness of the TSU111 device, we recommend

to add three capacitors of around 22 pF each between the two inputs, and between each

input and ground. These capacitors will lower the impedance of the input at high

frequencies and therefore reduce the impact of the radiation.

TSU111

+

-