AT9933 datasheet(4/16 Pages) MICROCHIP

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AT9933

DS20005597A-page 4

 2016 Microchip Technology Inc.

1.0

ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings†

VIN to GND ................................................................................................................................................–0.5V to +75V

CS1, CS2, PWMD and GATE to GND ............................................................................................. –0.3V to VDD +0.3V

VDD(MAX) ................................................................................................................................................................. +12V

Operating Temperature Range............................................................................................................. –40°C to +125°C

Junction Temperature.......................................................................................................................................... +150°C

Storage Temperature Range ............................................................................................................... –65°C to +150°C

Continuous Power Dissipation (TA = +25°C):

8-lead SOIC ............................................................................................................................................ 700 mW

† Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the

device. This is a stress rating only, and functional operation of the device at those or any other conditions above those

indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for

extended periods may affect device reliability.

ELECTRICAL CHARACTERISTICS

Electrical Specifications: Specifications are at TA = 25°C, VIN = Open and VDD = 7.5V unless otherwise noted.

Parameter

Sym.

Min.

Typ.

Max.

Unit

Conditions

INPUT

Input DC Supply Voltage Range

VINDC

Note 3

—

DC input voltage

(Note 1 and Note 2)

Shutdown Mode Supply Current

IINSD

—

0.5

PWMD connected to GND,

VIN = 12V (Note 2)

INTERNAL REGULATOR

Internally Regulated Voltage

VDD

7.5

VIN = 8V–75V, IDD(EXT) = 0,

500 pF capacitor at GATE,

PWMD = GND (Note 1)

VDD Undervoltage Lockout

Threshold

UVLO

6.35

6.7

7.05

VDD rising (Note 1)

VDD Undervoltage Lock-out

Hysteresis

∆UVLO

—

500

—

REFERENCE

REF Pin Voltage

0°C < TA < +85°C

VREF

1.212

1.25

1.288

REF bypassed with a 0.1 µF

capacitor to GND, IREF = 0,

PWMD = 5V

REF Pin Voltage

–40°C < TA < +125°C

1.187

1.25

1.312

Line Regulation of Reference

Voltage

VREFLINE

—

REF bypassed with a 0.1 µF capac-

itor to GND, IREF = 0,

VDD = 7V–9V, PWMD = 5V

Reference Output Current Range

IREF

–0.01

—

500

µA

REF bypassed with a 0.1 µF capac-

itor to GND, IREF = 0, VDD = 7V–9V,

PWMD = 5V

Load Regulation of Reference

Voltage

VREFLOAD

—

REF bypassed with a 0.1 µF capac-

itor to GND, IREF = 0 µA–500 µA,

PWMD = 5V

PWM DIMMING

PWMD Input Low Voltage

VPWMD(LO)

—

0.8

VDD = 7V–9V (Note 1)

PWMD Input High Voltage

VPWMD(HI)

—

VDD = 7V–9V (Note 1)

Note 1:

Specifications apply over the full operating ambient temperature range of –40ºC < TA < +125ºC.

2: Also limited by package power dissipation limit, whichever is lower

3: Depends on the current drawn by the part. See Section 4.0 “Application Information”

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