TPC8401 datasheet(1/11 Pages) TOSHIBA

부품명	TPC8401

상세설명	TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (U-MOSII)

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제조업체	TOSHIBA [Toshiba Semiconductor]

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TPC8401

2002-05-17

1

TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (U−MOSII)

TPC8401

Lithium Ion Secondary Battery Applications

Portable Equipment Applications

Notebook PCs

Low drain−source ON resistance

: P Channel RDS (ON) = 27 mΩ (typ.)

N Channel RDS (ON) = 14 mΩ (typ.)

High forward transfer admittance

: P Channel |Yfs| = 7 S (typ.)

N Channel |Yfs| = 8 S (typ.)

Low leakage current

: P Channel IDSS = −10 µA (VDS = −30 V)

N Channel IDSS = 10 µA (VDS = 30 V)

Enhancement−mode

: P Channel Vth = −0.8~ −2.0 V (VDS = −10 V, ID = −1mA)

N Channel Vth = 0.8~2.5 V (VDS = 10 V, ID = 1mA)

Maximum Ratings (Ta = 25°C)

Rating

Characteristics

Symbol

P Channel N Channel

Unit

Drain-source voltage

VDSS

−30

30

V

Drain-gate voltage (RGS = 20 kΩ)

VDGR

−30

30

V

Gate-source voltage

VGSS

±20

V

DC

(Note 1)

ID

−4.5

6

Drain current

Pulse

(Note 1)

IDP

−18

24

A

Single-device operation

(Note 3a)

PD (1)

1.5

Drain power

dissipation

(t = 10s)

(Note 2a)

Single-device value at

dual operation (Note 3b)

PD (2)

1.0

Single-device operation

(Note 3a)

PD (1)

0.75

Drain power

dissipation

(t = 10s)

(Note 2b)

Single-device value at

dual operation (Note 3b)

PD (2)

0.45

W

Single pulse avalanche energy

EAS

26.3

(Note 4a)

46.8

(Note 4b)

mJ

Avalanche current

IAR

−4.5

6

A

Repetitive avalanche energy

Single-device value at operation

(Note 2a, 3b, 5)

EAR

0.10

mJ

Channel temperature

Tch

150

°C

Storage temperature range

Tstg

−55~150

°C

Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4a), (Note 4b) and (Note 5), please refer to the

next page.

This transistor is an electrostatic sensitive device. Please handle with caution.

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-6J1E

Weight: 0.080 g (typ.)

Circuit Configuration

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