| 전자부품 데이터시트 검색엔진 |
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LEATBN7WM 데이터시트(PDF) 3 Page - OSRAM GmbH |
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LEATBN7WM 데이터시트(HTML) 3 Page - OSRAM GmbH |
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3 / 21 page ![]() Version 2.1 (not for new design) LE ATB N7WM 2015-11-25 3 Grenzwerte Maximum Ratings Bezeichnung Parameter Symbol Symbol Werte Values Einheit Unit amber true green blue Betriebstemperatur Operating temperature range T op – 40 … + 85 °C Lagertemperatur Storage temperature range T stg – 40 … + 85 °C Sperrschichttemperatur Junction temperature T j 125 °C Durchlassstrom pro Chip DC Forward current per chip DC ( T S =25 °C) I F 100 ... 500 mA Durchlassstrom pro Chip gepulst Forward current per chip pulsed (D = 0.5; f = 120Hz; T S = 25 °C) I Fpulse 100 ... 1000 mA Sperrspannung pro Chip DC Reverse voltage per chip DC V R not designed for reverse operation V |
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