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LM330 데이터시트(PDF) 2 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
부품명 LM330
상세설명  3-Terminal Positive Regulator
PDF  5 Pages
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제조업체  NSC [National Semiconductor (TI)]
홈페이지  http://www.national.com
Logo NSC - National Semiconductor (TI)

LM330 데이터시트(HTML) 2 Page - National Semiconductor (TI)

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Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Input Voltage
Operating Range
26V
Line Transient Protection (1000 ms)
40V
Internal Power Dissipation
Internally Limited
Operating Temperature Range
0˚C to +70˚C
Maximum Junction Temperature
+125˚C
Storage Temperature Range
−65˚C to +150˚C
Lead Temperature
(Soldering, 10 sec.)
+300˚C
Electrical Characteristics (Note 2)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
V
o
Output Voltage
T
j = 25˚C
4.8
5
5.2
Output Voltage
5 < I
o < 150 mA
4.75
5.25
V
Over Temp
6 < V
IN < 26V; 0˚C ≤ Tj ≤ 100˚C
∆V
o
Line Regulation
9 < V
IN < 16V, Io = 5mA
7
25
6 < V
IN < 26V, Io = 5mA
30
60
mV
Load Regulation
5 < I
o < 150 mA
14
50
Long Term Stability
20
mV/1000 hrs
I
Q
Quiescent Current
I
o = 10 mA
3.5
7
I
o = 50 mA
5
11
I
o = 150 mA
18
40
mA
Line Transient
V
IN = 40V, RL = 100Ω,1s
14
Reverse Polarity
V
IN = −6V, RL = 100Ω
−80
∆I
Q
Quiescent Current
6 < V
IN < 26V
10
%
Change
V
IN
Overvoltage Shutdown
26
38
Voltage
Max Line Transient
60
V
1s, V
o ≤ 5.5V
50
Reverse Polarity
−30
Input Voltage
DC V
o > − 0.3V, RL = 100Ω
−12
Output Noise Voltage
10 Hz–100 kHz
50
µV
Output Impedance
I
o = 100 mADC + 10 mArms
200
m
Ripple Rejection
56
dB
Current Limit
150
400
700
mA
Dropout Voltage
I
o = 150 mA
0.32
0.6
V
Thermal Resistance
Junction to Case
4
˚C/W
Junction to Ambient
50
Note 1: “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits.
Note 2: Unless otherwise specified: VIN = 14V, Io = 150 mA, Tj = 25˚C, C1 = 0.1 µF, C2 = 10 µF. All characteristics except noise voltage and ripple rejection are
measured using pulse techniques (tW ≤ 10 ms, duty cycle ≤ 5%). Output voltage changes due to changes in internal temperature must be taken into account sepa-
rately.
www.national.com
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