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LM3303 데이터시트(PDF) 2 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
부품명 LM3303
상세설명  Quad Operational Amplifiers
PDF  10 Pages
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제조업체  NSC [National Semiconductor (TI)]
홈페이지  http://www.national.com
Logo NSC - National Semiconductor (TI)

LM3303 데이터시트(HTML) 2 Page - National Semiconductor (TI)

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Absolute Maximum Ratings
If MilitaryAerospace specified devices are required
please contact the National Semiconductor Sales
OfficeDistributors for availability and specifications
Storage Temperature Range
Ceramic DIP
b
65 Cto a175 C
Molded DIP and SO-14
b
65 Cto a150 C
Operating Temperature Range
Industrial (LM3303)
b
40 Cto a85 C
Commercial (LM3403)
0 Cto a70 C
Lead Temperature
Ceramic DIP (Soldering 60 sec)
300 C
Molded DIP and SO-14
(Soldering 10 sec)
265 C
Internal Power Dissipation (Notes 1 2)
14L-Ceramic DIP
136W
14L-Molded DIP
104W
SO-14
093W
Supply Voltage between Va and Vb
36V
Differential Input Voltage (Note 3)
g
30V
Input Voltage
(Vb) b 03V to Va
ESD Tolerance
(To Be Determined)
LM3303 and LM3403
Electrical Characteristics TA e 25 C VCC e g15V unless otherwise specified
Symbol
Parameter
Conditions
LM3303
LM3403
Units
Min
Typ
Max
Min
Typ
Max
VIO
Input Offset Voltage
20
80
20
80
mV
IIO
Input Offset Current
30
75
30
50
nA
IIB
Input Bias Current
200
500
200
500
nA
ZI
Input Impedance
03
10
03
10
MX
ICC
Supply Current
VO e 0V RL e %
28
70
28
70
mA
CMR
Common Mode Rejection
RS s 10 kX
70
90
70
90
dB
VIR
Input Voltage Range
a
12V
a
125V
a
13V
a
135V
V
to Vb
to Vb
to Vb
to Vb
PSRR
Power Supply
30
150
30
150
m
VV
Rejection Ratio
IOS
Output Short Circuit Current
g
10
g
30
g
45
g
10
g
30
g
45
mA
(Per Amplifier) (Note 4)
AVS
Large Signal Voltage Gain
VO e g10V
20
200
20
200
VmV
RL t 20 kX
VOP
Output Voltage Swing
RL e 10 kX
g
12
125
g
12
a
135
V
RL e 20 kX
g
10
12
g
10
g
13
TR
Transient
Rise Time
VO e 50 mV
03
03
m
s
Response
Fall Time
AV e 10 RL e 10 kX
Overshoot
VO e 50 mV
50
50
%
AV e 10 RL e 10 kX
BW
Bandwidth
VO e 50 mV
10
10
MHz
AV e 10 RL e 10 kX
SR
Slew Rate
VI eb10V to a10V
06
06
V ms
AV e 10
2



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