MBR2X080A080 datasheet(1/3 Pages) GENESIC

부품명	MBR2X080A080

상세설명	Electrically Isolated Base Plate

PDF	3 Pages

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제조업체	GENESIC [GeneSiC Semiconductor, Inc.]

홈페이지	http://www.genesicsemi.com/

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1 / 3 page

VRRM = 80 V

Module Type 160 A

IF(AV) = 160 A

Features

• High Surge Capability

• Type 80 V VRRM

• Isolation Type Package

SOT-227 Package

• Electrically Isolated Base Plate

• Not ESD Sensitive

Parameter

Symbol

Value

Unit

Maximum recurrent peak reverse voltage

VRRM

80

V

Maximum DC blocking voltage

VDC

80

V

Conditions

MBR2X080A080

Maximum ratings

Schottky Rectifier

Maximum DC blocking voltage

VDC

80

V

Maximum RMS Voltage

VRMS

56

V

Operating temperature

Tj

-40 to 150

°C

Storage temperature

Tstg

-40 to 150

°C

Parameter

Symbol

Value

Unit

Average forward current

(per pkg)

IF(AV)

160

A

Peak forward surge current

(per leg)

IFSM

900

A

0.84

V

0.73

V

1mA

10

mA

30

mA

Isolation voltage

ViSO

2500

V

Thermal characteristics

* Pulse Test: Pulse width 300 µs, Duty < 2 %

Electrical characteristics at 25 °C, unless otherwise specified

Conditions

Tj = 25 °C

8.3 ms, half sine

TC = 110 °C

Maximum thermal resistance junction to case

(per leg)

R

Θjc

°C/W

Tj = 150 °C

0.60

IFM = 80 A, Tj = 125 °C

Maximum instantaneous reverse current at

rated DC blocking voltage (per leg)

IR

Maximum instantaneous forward voltage*

(per leg)

IFM = 80 A, Tj = 25 °C

VF

Tj = 100 °C

A.C. 1 minute

www.genesicsemi.com/silicon-products/schottky-rectifiers/

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MBR2X080A080 데이터시트(PDF) 1 Page - GeneSiC Semiconductor, Inc.

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