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PRELIMINARY DATA

May 2000

PD55008 - PD55008S

RF POWER TRANSISTORS

The LdmoST Plastic FAMILY

N-CHANNEL ENHANCEMENT-MODE LATERAL

MOSFETs

• EXCELLENT THERMAL STABILITY

• COMMON SOURCE CONFIGURATION

• POUT = 8 W with 17 dB gain @ 500 MHz /

12.5V

• NEW RF PLASTIC PACKAGE

DESCRIPTION

The PD55008 is a common source N-Channel, en-

hancement-mode, lateral Field-Effect RF power

transistor. It is designed for high gain, broad band

commercial and industrial applications. It operates

at 12V in common source mode at frequencies of

up to 1GHz. PD55008 boasts the excellent gain,

linearity and reliability of ST’s latest LDMOS tech-

nology mounted in the first true SMD plastic RF

power package, PowerSO-10RF. PD55008’s su-

perior linearity performance makes it an ideal so-

lution for car mobile radio.

The PowerSO-10 plastic package, designed to of-

fer high reliability, is the first ST JEDEC approved,

high power SMD package. It has been specially

optimized for RF needs and offers excellent RF

performances and ease of assembly.

PowerSO-10RF

(Formed Lead)

ORDER CODE

BRANDING

XPD55008

PowerSO-10RF

(Straight Lead)

ORDER CODE

BRANDING

PD55008

PD55008S

XPD55008S

Symbol

Parameter

Value

Unit

Drain Source Voltage

40

V

Gate-Source Voltage

±20

V

Drain Current

4

A

52.8

W

Max. Operating Junction Temperature

165

Storage Temperature

-65 to 165

THERMAL DATA

Junction-Case Thermal Resistance

1.8

O

C/W