| 전자부품 데이터시트 검색엔진 |
|
2SD1481 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
|
|
|||||||||||||||||||||||||||||
2SD1481 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
|
2 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Darlington Power Transistor 2SD1481 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat)* Collector-Emitter Saturation Voltage IC= 1A, IB= 1mA 1.5 V VBE(sat)* Base-Emitter Saturation Voltage IC= 1A, IB= 1mA 2.0 V ICBO Collector Cutoff Current VCB= 40V, IE= 0 1 uA hFE-1* DC Current Gain IC= 1A; VCE= 2V 2000 20000 hFE-2* DC Current Gain IC= 3A; VCE= 2V 500 *:Pulse test PW≤350us,duty cycle≤2% Switching Times ton Turn-on Time IC= 1A; IB1= IB2= 1mA 0.5 μ s ts Storage Time 2.0 μ s tf Fall Time 1.0 μ s hFE-1 Classifications M L K 2000-5000 4000-10000 8000-20000 |
|
|
링크 URL |
| ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크 투 데이터시트 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |