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2SD1510 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1510 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Darlington Power Transistor 2SD1510 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ; IB= 0 60 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 12mA 2.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A; IB= 20mA 4.0 V VBE(on) Base -Emitter On Voltage IC= 3A ; VCE= 3V 2.5 V ICBO Collector Cutoff Current VCB= 60V; IE= 0 100 μ A IEBO Emitter Cutoff Current VEB= 6V; IC= 0 2.0 mA hFE -1 DC Current Gain IC= 0.5A ; VCE= 3V 1000 hFE -2 DC Current Gain IC= 3A ; VCE= 3V 1000 10000 fT Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 10V 20 MHz hFE-2Classifications R Q P 1000-2500 2000-5000 4000-10000 |
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