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2SD1982 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1982 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Darlington Power Transistor 2SD1982 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 300 V V(BR)CBO Collector-Base Breakdown Voltage IC=1mA; IE= 0 300 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA; IC= 0 5 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 16mA 1.8 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC=6A; IB= 24mA 2.0 V VBE(sat) -1 Base-Emitter Saturation Voltage IC= 4A; IB= 16mA 2.0 V VBE(sat)-2 Base-Emitter Saturation Voltage IC=6A; IB= 24mA 2.5 V ICBO Collector Cutoff Current VCB= 300V; IE= 0 100 μ A IEBO Emitter Cutoff Current VEB= 5V; IC= 0 5.0 mA hFE DC Current Gain IB= 4A; VCE= 2V 2000 |
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