RTQ035P02FHA datasheet(2/8 Pages) ROHM

2 / 8 page

RTQ035P02

Transistor

Rev.A

2/4

Electrical characteristics (Ta=25°C)

Parameter

Symbol

IGSS

V(BR)DSS

IDSS

VGS(th)

RDS(on)

Ciss

Yfs

Coss

Crss

Min.

−

−20

−

−0.7

−

3.5

−

1200

−

200

130

±10

−

−1

−2.0

−

µA

VGS=±12V, VDS=0V

ID=−1

, VGS

=0V

VDS

=−20V, VGS=0V

VDS

=−10V, ID=−3.5A

VDS

=−10V, ID=−1

=−3.5A, VGS=−4.5V

VDS=−10V,VGS=0V

=1MHz

µA

mΩ

td(on)

−

ID=−2A

VDD −15V

−

VGS

=−4.5V

td(off)

−

=7.5Ω

−

=10Ω

Typ.

Max.

Unit

Conditions

Gate-source leakage

Gate threshold voltage

Foward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Turn-off delay time

Rise time

Fall time

Drain-source breakdown voltage

Static drain-source on-state

resistance

Zero gate voltage drain current

Total gate charge

Gate-source charge

Gate-drain charge

Qgs

Qgd

mΩ

−

10.5

2.0

3.5

100

mA,

ID=−3.5A, VGS=−4V

=−1.75A, VGS=−2.5V

VDD −15V

VGS

=−4.5V

∗

∗PULSED

=−3.5A

Body diode characteristics (Source-drain) (Ta=25°C)

Forward voltage

VSD

−

−1.2

−

=−1A, VGS=0V

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

RTQ035P02FHA

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