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SB3150L-SMB-R 데이터시트(PDF) 2 Page - Unisonic Technologies

부품명 SB3150L-SMB-R
상세설명  High current capability
PDF  3 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

SB3150L-SMB-R 데이터시트(HTML) 2 Page - Unisonic Technologies

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SB3150
Preliminary
DIODE
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R202-063.a
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Repetitive Peak Reverse Voltage
VRRM
150
V
Working Peak Reverse Voltage
VRWM
150
V
DC Blocking Voltage
VR
150
V
Average Rectified Output Current
IO
3.0
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM
110
A
Junction Temperature Range
TJ
-65 ~ +150
°C
Storage Temperature Range
TSTG
-65 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
UNIT
Typical Thermal Resistance
θJL
20
°C/W
ELECTRICAL CHARACTERISTICS (PER LEG) (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Reverse Breakdown Voltage
V(BR)R
IR=0.50mA
150
V
Instantaneous Forward Voltage Drop
VFM
IF=3.0A, TJ=25°C
0.89
V
Rated DC Voltage, TJ=25°C
1.0
mA
Peak Reverse Current at Rated DC
Blocking Voltage
IRM
Rated DC Voltage, TJ=125°C
7.0
mA
Junction Capacitance (Note 2)
CJ
250
pF
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.



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