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PALCE20V8 데이터시트(PDF) 4 Page - Cypress Semiconductor

부품명 PALCE20V8
상세설명  Flash Erasable, Reprogrammable CMOS PAL Device
PDF  13 Pages
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제조업체  CYPRESS [Cypress Semiconductor]
홈페이지  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

PALCE20V8 데이터시트(HTML) 4 Page - Cypress Semiconductor

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PALCE20V8
4
Electrical Characteristics Over the Operating Range[2]
Parameter
Description
Test Conditions
Min.
Max.
Unit
VOH
Output HIGH Voltage
VCC = Min.,
VIN = VIH or VIL
IOH = −3.2 mA
Com’l
2.4
V
IOH = −2 mA
Mil/Ind
VOL
Output LOW Voltage
VCC = Min.,
VIN = VIH or VIL
IOL = 24 mA
Com’l
0.5
V
IOL = 12 mA
Mil/Ind
VIH
Input HIGH Level
Guaranteed Input Logical HIGH Voltage for All Inputs[3]
2.0
V
VIL
[4]
Input LOW Level
Guaranteed Input Logical LOW Voltage for All Inputs[3]
−0.5
0.8
V
IIH
Input or I/O HIGH Leakage
Current
3.5V < VIN < VCC
10
µA
IIL
[5]
Input or I/O LOW Leakage
Current
0V < VIN < VIN (Max.)
−100
µA
ISC
Output Short Circuit Current VCC = Max., VOUT = 0.5V
[6,7]
−30
−150
mA
ICC
Operating Power Supply
Current
VCC = Max.,
VIL = 0V, VIH = 3V,
Output Open,
f = 15 MHz
(counter)
5, 7, 10 ns
Com’l
115
mA
15, 25 ns
90
mA
15L, 25L ns
55
mA
10, 15, 25 ns
Mil/Ind
130
mA
15L, 25L ns
Mil/Ind
65
mA
Capacitance[7]
Parameter
Description
Test Conditions
Typ.
Unit
CIN
Input Capacitance
VIN = 2.0V @ f = 1 MHz
5
pF
COUT
Output Capacitance
VOUT = 2.0V @ f = 1 MHz
5
pF
Endurance Characteristics[7]
Parameter
Description
Test Conditions
Min.
Max.
Unit
N
Minimum Reprogramming Cycles
Normal Programming Conditions
100
Cycles
Notes:
2.
See the last page of this specification for Group A subgroup testing information.
3.
These are absolute values with respect to device ground. All overshoots due to system or tester noise are included.
4.
VIL (Min.) is equal to −3.0V for pulse durations less than 20 ns.
5.
The leakage current is due to the internal pull-up resistor on all pins.
6.
Not more than one output should be tested at a time. Duration of the short circuit should not be more than one second. VOUT = 0.5V has been chosen to avoid test problems
caused by tester ground degradation.
7.
Tested initially and after any design or process changes that may affect these parameters.



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