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LM4663MT 데이터시트(PDF) 2 Page - National Semiconductor (TI) |
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LM4663MT 데이터시트(HTML) 2 Page - National Semiconductor (TI) |
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2 / 10 page ![]() Absolute Maximum Ratings (Note 2) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Supply Voltage 6.0V Input Voltage −0.3V to V DD +0.3V Power Dissipation (Note 3) Internally Limited Load Resistance 2.5 Ω, min ESD Susceptibility(Note 4) 2000V Pins 5,7,18,20 600V ESD Susceptibility (Note 5) 200V Pins 5,7,18,20 50V Junction Temperature (Note 6) 150˚C Storage Temperature −65˚C ≤ T A ≤ 150˚C Soldering Information TSSOP Package Vapor Phase (60 sec.) 215˚C Infrared (15 sec.) 220˚C See AN-450 “Surface Mounting and their Effects on Product Reliability” for other methods of soldering surface mount devices. Operating Ratings(Notes 1, 2) Temperature Range T MIN ≤ TA ≤ TMAX −40˚C ≤ T A ≤ +85˚C Supply Voltage 4.5V ≤ V DD ≤ 5.5V Thermal Resistance (TSSOP Package) θ JA 80˚C/W θ JC 20˚C/W Electrical Characteristics (Notes 1, 2, 7) The following specifications apply for V DD = 5V, RL = 4Ω, LC filter values as shown in Figure 1, unless otherwise specified. Limits apply for T A = 25˚C. Symbol Parameter Conditions LM4663 Units Typical Max Min V S Operating Supply Voltage Range 5 5.5 4.5 V I S Quiescent Power Supply Current, Class D Mode V IN = 0VRMS,VHPSEL = 0V 22 35 mA I S Quiescent Power Supply Current, Headphone Mode V IN = 0VRMS,VHPSEL = VS 510 mA I SD Quiescent Power Supply Current, Shutdown Mode V SD = 5V 2 µA R IN Input Resistance in Both Modes 20 k Ω V IH Minimum High Level Input Voltage Shutdown Pin & Input Select Pin 4.5 V V IL Maximum Low Level Input Voltage Shutdown Pin & Input Select Pin 0.5 V V IH Minimum High Level Input Voltage Headphone Select Pin 4.5 V V IL Maximum Low Level Input Voltage Headphone Select Pin 0.5 V Power Amplifiers P OR Output Power, Per Channel THD+N ≤ 1%,f IN = 1kHz 2.1 W P D1 Power Dissipation P O = 2W/Chan, fIN = 1kHz 0.82 W P D2 Power Dissipation P O = 1W/Chan, fIN = 1kHz 0.49 W P D3 Power Dissipation P O = .25W/Chan, fIN = 1kHz 0.23 W E FF1 Efficiency P O = 2W/Chan, fIN = 1kHz 83 % E FF2 Efficiency P O = 1W/Chan, RL = 8Ω,fIN = 1kHz 85 80 % E FF3 Efficiency P O = .25W/Chan, fIN = 1kHz 69 % THD+N Harmonic Distortion + Noise P O = 1W/Chan, fIN = 1kHz 0.2 % V NOISE Output Noise Voltage, RMS. A−Weighted R SOURCE = 50Ω,CIN = 1µF, BW = 8Hz to 22kHz 200 µV PSRR Power Supply Rejection Ratio (Referred to Input) 200mV, 1kHz, V IN = 044 dB A V Voltage Gain 1kHz, V IN = 100mV, RL = 4Ω 13 dB A VL−AVR Stereo Gain Tracking 1kHz, V IN = 100mV, RL = 4Ω 0.1 dB www.national.com 2 |
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