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S6JB80 데이터시트(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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S6JB80 데이터시트(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page ![]() Elektronische Bauelemente S6JB80 Voltage 800V 6.0 Amp Glass Passivited Bridge Rectifiers 24-Apr-2013 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS compliant product A suffix of “-C” specifies halogen & lead-free FEATURES Ideal for printed circuit board Low forward voltage drop, high current capability Reliable low cost construction utilizing molded plastic technique results in inexpensive product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Rating 25°C ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive or inductive load. For capacitive load, de-rate current by 20%.) Parameter Symbol Rating Unit Maximum Recurrent Peak Reverse Voltage VRRM 800 V TC=131°C (with heat sink) 6 Average Rectified Output Current @60HZ sine wave, R-load TA=25°C (without heat sink) IO 1.8 A Peak Forward Surge Current @ 60HZ sine wave, 1 cycle, TA=25°C IFSM 100 A Maximum Peak Forward Voltage 3 VFM 1.05 V Peak Reverse Current 2 IRRM 10 µA Rating for fusing@ 1ms≦t≦8.3ms , per diode I 2T 41.5 A 2S Mounting Torque @ Recommend torque:5kg·cm TOR 8 Kg‧cm Dielectric Strength 1 Vdis 2 kV Typical Thermal Resistance (with heat sink) RθJC 1.5 °C/W Typical Thermal Resistance(without heat sink) RθJA 40 °C/W Typical Thermal Resistance(without heat sink) RθJL 6.5 °C/W Operating and Storage temperature range TJ,TSTG -55~150 °C Notes: 1. Terminals to case,AC 1 minute 2. VRM=VRRM, Pulse measurement, Rating of per diode. 3. IFM=3A, Pulse measurement, Rating of per diode JB Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 24.7 25.3 G 2.5 2.9 B 10.0 10.6 H 0.9 1.1 C 1.4(TYP.) I 0.4 0.6 D 13.0 14.0 J 3.0 3.4 E 7.3 7.7 K φ3.2(TYP.) F 4.0 4.4 |
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