| 전자부품 데이터시트 검색엔진 |
|
UESD4CUSB30G-AF5-R 데이터시트(PDF) 3 Page - Unisonic Technologies |
|
|
|||||||||||||||||||||||||||||
UESD4CUSB30G-AF5-R 데이터시트(HTML) 3 Page - Unisonic Technologies |
|
3 / 4 page ![]() UESD4CUSB30 Preliminary TVS UNISONICTECHNOLOGIESCO.,LTD 3 of 4 www.unisonic.com.tw QW-R223-027.a ABSOLUTE MAXIMUM RATING over operating free-air temperature range (unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT IO Voltage (D+ and D- Pins) 0~6 V EC 61000-4-5 Surge Current (tp=8/20μs) D+, D- Pins 5 A IEC 61000-4-5 Surge Peak Power (tp=8/20μs) D+, D- Pins 45 W Operating Free-Air Temperature Range TA -40~85 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. HANDLING RATINGS PARAMETER SYMBOL RATINGS UNIT Storage Temperature Range TSTG -65~125 °C Human Body Model (HBM), Per ANSI/ESDA/JEDEC JS-001, All Pins (Note 1) -2.5~2.5 kV Charged Device Model (CDM), per JEDEC Specification JESD22-C101, All Pins (Note 2) -1.5~1.5 kV IEC 61000-4-2 Contact Discharge D+, D- Pins -8~8 kV Electrostatic Discharge IEC 61000-4-2 Air-Gap Discharge D+, D- Pins V(ESD) -9~9 kV Notes: 1. JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. 2. JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. RECOMMENDED OPERATING CONDITIONS over operating free-air temperature range (unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Operating Free-Air Temperature Range TA -40 ~ 85 °C Operating Voltage 0 ~ 5.5 V ELECTRICAL CHARACTERISTICS over operating free-air temperature range (unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Reverse Stand-Off Voltage (D+ and D- Pins) VRWM 5.5 V Clamp Voltage Vclamp D+,D- Pins to Ground, IIO=1A 8 V Current from IO Port to Supply Pins IIO VIO=2.5V, ID=8mA 0.01 0.1 μA Diode Forward Voltage VD D+,D- Pins, VIO=2.5V, Lower Clamp Diode, ID=8mA 0.6 0.8 0.95 V Dynamic Resistance Rdyn D+,D- Pins I=1A 0.6 Ω Capacitance IO to IO CIO-IO D+,D- Pins VIO=2.5V 0.05 pF Capacitance IO to GND CIO-GND D+,D- Pins VIO=2.5V 0.7 pF Break-Down Voltage VBR IIO=1mA 7 V |
|
|
링크 URL |
| ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크 투 데이터시트 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |