| 전자부품 데이터시트 검색엔진 |
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BUW1215 데이터시트(PDF) 4 Page - STMicroelectronics |
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BUW1215 데이터시트(HTML) 4 Page - STMicroelectronics |
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4 / 7 page ![]() Reverse Biased SOA In order to saturate the power switch and reduce conduction losses, adequate direct base current IB1 has to be provided for the lowest gain hFE at 100 oC (line scan phase). On the other hand, negative base current IB2 must be provided the transistor to turn off (retrace phase). Most of the dissipation, especially in the deflection application, occurs at switch-off so it is essential to determine the value of IB2 which minimizes power losses, fall time tf and, consequently, Tj. A new set of curves have been defined to give total power losses, ts and tf as a function of IB1 at 64 KHz scanning frequencies for choosing the optimum negative drive. The test circuit is illustrated in figure 1. The values of L and C are calculated from the following equations: 1 2 L (IC)2 = 1 2 C (VCEfly)2 ω = 2 πf = 1 √ L C Where IC = operating collector current, VCEfly= flyback voltage, f= frequency of oscillation during retrace. BASE DRIVE INFORMATION BUW1215 4/7 |
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