2SD862 datasheet(1/2 Pages) ISC

부품명	2SD862

상세설명	isc Silicon NPN Power Transistor

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제조업체	ISC [Inchange Semiconductor Company Limited]

홈페이지	http://www.iscsemi.cn

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INCHANGE Semiconductor

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isc Silicon NPN Power Transistor

2SD862

DESCRIPTION

·High Collector Current-IC= 2A

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 20V(Min)

·Good Linearity of hFE

·Low Saturation Voltage

·Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·Designed for high frequency, Low Vce(sat) middle power

transistors in a plastic envelope, primarily for use in audio

and general purpose applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

20

V

VCEO

Collector-Emitter Voltage

20

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current-Continuous

2

A

IB

Base Current-Continuous

0.5

A

PC

Collector Power Dissipation

@ TC=25℃

10

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

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