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IRF7201 데이터시트(PDF) 2 Page - International Rectifier

부품명 IRF7201
상세설명  HEXFET Power MOSFET
PDF  7 Pages
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

IRF7201 데이터시트(HTML) 2 Page - International Rectifier

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IRF7201
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
30
–––
–––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– 0.024 –––
V/°C
Reference to 25°C, ID = 1mA
–––
––– 0.030
VGS = 10V, ID = 7.3A
„
–––
––– 0.050
VGS = 4.5V, ID = 3.7A
„
VGS(th)
Gate Threshold Voltage
1.0
–––
–––
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
5.8
–––
–––
S
VDS = 15V, ID = 2.3A
–––
–––
1.0
VDS = 24V, VGS = 0V
–––
–––
25
VDS = 24V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
–––
–––
-100
VGS = -20V
Gate-to-Source Reverse Leakage
–––
–––
100
VGS = 20V
Qg
Total Gate Charge
–––
19
28
ID = 4.6A
Qgs
Gate-to-Source Charge
–––
2.3
3.5
nC
VDS = 24V
Qgd
Gate-to-Drain ("Miller") Charge
–––
6.3
9.5
VGS = 10V, See Fig. 10
„
td(on)
Turn-On Delay Time
–––
7.0
–––
VDD = 15V
tr
Rise Time
–––
35
–––
ID = 4.6A
td(off)
Turn-Off Delay Time
–––
21
–––
RG = 6.2Ω
tf
Fall Time
–––
19
–––
RD = 3.2Ω,
„
Ciss
Input Capacitance
–––
550
–––
VGS = 0V
Coss
Output Capacitance
–––
260
–––
pF
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
100
–––
ƒ = 1.0MHz, See Fig. 9
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
µA
Ω
RDS(on)
Static Drain-to-Source On-Resistance
IDSS
Drain-to-Source Leakage Current
nA
ns
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.2
V
TJ = 25°C, IS = 4.6A, VGS = 0V
ƒ
trr
Reverse Recovery Time
–––
48
73
ns
TJ = 25°C, IF = 4.6A
Qrr
Reverse RecoveryCharge
–––
73
110
nC
di/dt = 100A/µs
ƒ
Source-Drain Ratings and Characteristics
––– –––
––– –––
58
2.5
A
S
D
G
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
ƒ I
SD ≤ 4.6A, di/dt ≤ 120A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Notes:
‚ VDD = 15V, starting TJ = 25°C, L = 6.6mH
RG = 25Ω, IAS = 4.6A. (See Figure 8)
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
… When mounted on 1 inch square copper board, t<10 sec



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