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US223XXG-AF5-R 데이터시트(PDF) 3 Page - Unisonic Technologies |
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US223XXG-AF5-R 데이터시트(HTML) 3 Page - Unisonic Technologies |
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3 / 7 page ![]() US223 Preliminary CMOS IC UNISONICTECHNOLOGIESCO.,LTD 3 of 7 www.unisonic.com.tw QW-R129-022.a ABSOLUTE MAXIMUM RATING (TA = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Supply Voltage VIN 6.5 V Enable Input Voltage VEN -0.3 ~ +6.5 V Flag Voltage VFLG 6.5 V Power Dissipation (TA = 25°C) PD 0.4 W Junction Temperature TJ 150 °C Storage Temperature TSTG -65~150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 250 °C/W RECOMMENDED OPERATING CONDITIONS PARAMETER SYMBOL RATINGS UNIT Supply Input Voltage VIN 3.5 ~ 5.5 V Enable Input Voltage VI(EN) 0 ~ 5.5 V Junction Temperature TJ -40 ~ +125 °C Ambient Operating Temperature TOPR -40 ~ +85 °C ELECTRICAL CHARACTERISTICS (VIN=5V, CIN=COUT=1μF, TA=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Switch On Resistance (US223A, US223B) IOUT= 1A, VIN= 5V 80 120 mΩ Switch On Resistance (US223C, US223D) RDS(ON) IOUT= 0.5A, VIN= 5V 80 120 mΩ ISW_ON switch on, RLOAD Open 75 120 Supply Current ISW_OFF switch off, RLOAD Open 0.1 1 μA Logic-Low VIL VIN = 3.5V ~ 5.5V 0.8 V EN Threshold Voltage Logic-High VIH VIN = 3.5V ~ 5.5V 2.0 V EN Input Current IEN VEN/EN = 0V ~ 5.5V 0.01 μA Output Leakage Current IO(LEAK) VEN=0V, RLOAD= 0Ω 0.5 10 μA Output Turn-On Rise Time TON(RISE) 10% to 90% of VOUT rising 400 μs US223Ax 2.1 2.5 3.2 A US223Bx 1.6 2.0 2.5 A US223Cx 1.1 1.5 1.8 A Current Limit US223Dx ILIMIT Current Ramp (< 0.1A/ms) on VOUT 0.6 0.8 1.1 A US223Ax 1 A US223Bx 1 A US223Cx 1 A Short Circuit Fold-Back Current US223Dx ISC(FB) VOUT = 0V, measured prior to thermal shutdown 1 A FLAG Output Resistance R FLG ISINK= 1mA 20 400 Ω FLAG Off Current I FLG _OFF V FLG = 5V 0.01 1 μA FLAG Delay Time tD From fault condition to FLG assertion 5 12 20 ms Shutdown Pull-Low Resistance RDS VEN=0V, VEN 75 150 Ω Under-Voltage Lockout VUVLO VIN increasing 1.3 1.7 V Under-Voltage Hysteresis ∆VUVLO VIN decreasing 0.1 V Thermal Shutdown Protection TSD 130 °C Thermal Shutdown Hysteresis ∆TSD 20 °C Note: The device is not guaranteed to function outside its operating conditions. |
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