REF1112

2

SBOS283

www.ti.com

REF1112 - 1.25V

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNITS

REVERSE BREAKDOWN VOLTAGE

1.2475

1.25

1.2525

V

-0.2

+ 0.2

%

TEMPERATURE COEFFICIENT

1.2

0°C to +70°C

10

30

ppm/°C

–40°C to +85°C

15

50

ppm/°C

–40°C to +125°C

15

ppm/°C

MINIMUM OPERATING CURRENT

1

1.2

µA

REVERSE BREAKDOWN VOLTAGE

30

100

ppm/mA

CHANGE WITH CURRENT

1.2

REVERSE DYNAMIC IMPEDANCE

1.2

0.037

0.125

Ω

0.1Hz

25

µV

PP

100

ppm

LONG-TERM STABILITY

+25°C ± 0.1°C

60

ppm/kHr

TEMPERATURE CHARACTERISTICS

Specified Range

–40

+125

°C

Operating Range

–55

+125

°C

Storage Range

–65

+150

°C

Thermal Resistance

PRELIMINARY ELECTRICAL CHARACTERISTICS

SOT23-3 Surface-Mount

135

°C/W

(1) Peak-to-peak noise is measured with a 2-pole high-pass filter at 0.1Hz and a 4-pole low-pass chebyshev filter at 10Hz.

(2) Thermal hysteresis is defined as the change in output voltage after operating the device at 25°C, cycling the device through the specified temperature range, and

returning to 25°C.

Reverse Breakdown Current ............................................................ 10mA

Forward Current ............................................................................... 10mA

Operating Temperature ................................................. –55°C to +125°C

Storage Temperature .................................................... –65°C to +150°C

Junction Temperature .................................................................. +150°C

Lead Temperature (soldering, 10s) ............................................... +300°C

(1) Stresses above these ratings may cause permanent damage. Exposure

to absolute maximum conditions for extended periods may degrade device

reliability. These are stress ratings only, and functional operation of the device

at these or any other conditions beyond those specified is not implied.

PACKAGE/ORDERING INFORMATION

ELECTROSTATIC

DISCHARGE SENSITIVITY

Electrostatic discharge can cause damage ranging from performance

degradation to complete device failure. Texas Instruments recom-

mends that all integrated circuits be handled and stored using appro-

priate ESD protection methods.

ESD damage can range from subtle performance degradation to

complete device failure. Precision integrated circuits may be more

susceptible to damage because very small parametric changes could

cause the device not to meet published specifications.

SPECIFIED

PACKAGE

TEMPERATURE

PACKAGE

ORDERING

TRANSPORT

PRODUCT

PACKAGE-LEAD

RANGE

MARKING

NUMBER

MEDIA, QUANTITY

REF1112

SOT23-3

DBZ

–40°C to +125°C

R11A

REF1112AIDBZT

Tape and Reel, 250

"

"""

"

REF1112AIDBZR

Tape and Reel, 3000

NOTE: (1) For the most current specifications and package information, refer to our web site at www.ti.com.