NJVMJD50T4G datasheet(1/4 Pages) ONSEMI

부품명	NJVMJD50T4G

상세설명	High Voltage Power Transistors

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January, 2015 − Rev. 12

1

Publication Order Number:

MJE2955T/D

MJE2955T (PNP),

MJE3055T (NPN)

Complementary Silicon

Plastic Power Transistors

These devices are designed for use in general−purpose amplifier and

switching applications.

Features

• High Current Gain − Bandwidth Product

• These Devices are Pb−Free and are RoHS Compliant*

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector−Emitter Voltage

VCEO

60

Vdc

Collector−Base Voltage

VCB

70

Vdc

Emitter−Base Voltage

VEB

5.0

Vdc

Collector Current

IC

10

Adc

Base Current

IB

6.0

Adc

Total Device Dissipation

@ TC = 25°C

Derate above 25

°C

PD

(Note 1)

75

0.6

W

W/

°C

Operating and Storage Junction

Temperature Range

TJ, Tstg

−55 to +150

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Safe Area Curves are indicated by Figure 1. Both limits are applicable and

must be observed.

THERMAL CHARACTERISTICS

Characteristics

Symbol

Max

Unit

Thermal Resistance, Junction−to−Case

RqJC

1.67

°C/W

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

10 AMPERE

COMPLEMENTARY SILICON

POWER TRANSISTORS

60 VOLTS − 75 WATTS

www.onsemi.com

MARKING DIAGRAM

MJExx55T = Device Code

xx = 29 or 30

G

= Pb−Free Package

A

= Assembly Location

Y

= Year

WW

= Work Week

MJExx55TG

AY WW

Device

Package

Shipping

ORDERING INFORMATION

MJE2955TG

TO−220

(Pb−Free)

50 Units / Rail

MJE3055TG

TO−220

(Pb−Free)

50 Units / Rail

1

BASE

EMITTER 3

COLLECTOR 2, 4

1

BASE

EMITTER 3

COLLECTOR 2, 4

PNP

NPN

TO−220

CASE 221A−09

STYLE 1

1

2

3

4

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