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2SC4617G 데이터시트(PDF) 2 Page - ON Semiconductor

부품명 2SC4617G
상세설명  NPN Silicon General Purpose Amplifier Transistor
PDF  4 Pages
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제조업체  ONSEMI [ON Semiconductor]
홈페이지  http://www.onsemi.com
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2SC4617G 데이터시트(HTML) 2 Page - ON Semiconductor

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2SC4617G, S2SC4617G
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ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector-Base Breakdown Voltage (IC = 50 mAdc, IE = 0)
V(BR)CBO
50
−
−
Vdc
Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0)
V(BR)CEO
50
−
−
Vdc
Emitter-Base Breakdown Voltage (IE = 50 mAdc, IE = 0)
V(BR)EBO
5.0
−
−
Vdc
Collector-Base Cutoff Current (VCB = 30 Vdc, IE = 0)
ICBO
−
−
0.5
mA
Emitter-Base Cutoff Current (VEB = 4.0 Vdc, IB = 0)
IEBO
−
−
0.5
mA
Collector-Emitter Saturation Voltage (Note 2)
(IC = 60 mAdc, IB = 5.0 mAdc)
VCE(sat)
−
−
0.4
Vdc
DC Current Gain (Note 2)
(VCE = 6.0 Vdc, IC = 1.0 mAdc)
hFE
120
−
560
−
Transition Frequency (VCE = 12 Vdc, IC = 2.0 mAdc, f = 30 MHz)
fT
−
180
−
MHz
Output Capacitance (VCB = 12 Vdc, IC = 0 Adc, f = 1 MHz)
COB
−
2.0
−
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width
≤ 300 ms, D.C. ≤ 2%.



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