| 전자부품 데이터시트 검색엔진 |
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2SC4617G 데이터시트(PDF) 2 Page - ON Semiconductor |
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2SC4617G 데이터시트(HTML) 2 Page - ON Semiconductor |
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2 / 4 page ![]() 2SC4617G, S2SC4617G http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Symbol Min Typ Max Unit Collector-Base Breakdown Voltage (IC = 50 mAdc, IE = 0) V(BR)CBO 50 − − Vdc Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO 50 − − Vdc Emitter-Base Breakdown Voltage (IE = 50 mAdc, IE = 0) V(BR)EBO 5.0 − − Vdc Collector-Base Cutoff Current (VCB = 30 Vdc, IE = 0) ICBO − − 0.5 mA Emitter-Base Cutoff Current (VEB = 4.0 Vdc, IB = 0) IEBO − − 0.5 mA Collector-Emitter Saturation Voltage (Note 2) (IC = 60 mAdc, IB = 5.0 mAdc) VCE(sat) − − 0.4 Vdc DC Current Gain (Note 2) (VCE = 6.0 Vdc, IC = 1.0 mAdc) hFE 120 − 560 − Transition Frequency (VCE = 12 Vdc, IC = 2.0 mAdc, f = 30 MHz) fT − 180 − MHz Output Capacitance (VCB = 12 Vdc, IC = 0 Adc, f = 1 MHz) COB − 2.0 − pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%. |
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