| 전자부품 데이터시트 검색엔진 |
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BUV21 데이터시트(PDF) 3 Page - ON Semiconductor |
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BUV21 데이터시트(HTML) 3 Page - ON Semiconductor |
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3 / 4 page ![]() BUV21 http://onsemi.com 3 Figure 2. Active Region Safe Operating Area 40 1 VCE, COLLECTOR-EMITTER VOLTAGE (V) 10 200 10 1 0.1 100 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 2 is based on TC = 25_C, TJ(pk) is variable depending on power level. Second breakdown limitations do not derate the same as thermal limitations. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Figure 3. “On” Voltages Figure 4. DC Current Gain 50 100 IC, COLLECTOR CURRENT (A) 110 40 0 30 20 10 VCE = 5 V Figure 5. Resistive Switching Performance 3.0 0 5 10 15 25 VCE = 100 V IC/IB1 = 8 IB1 = IB2 2.0 1.0 tS 0.4 0.3 0.2 20 ton tF 2.0 IC, COLLECTOR CURRENT (A) 110 1.6 IC/IB = 8 0.8 1.2 0.4 Figure 6. Switching Times Test Circuit IC, COLLECTOR CURRENT (A) VBE VCE VCC IB2 IB1 RB RC RC − RB: Non inductive resistances VCC = 100 V RC =4 W RB = 2.2 W 10,000 mF 0 |
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