PSMN005 datasheet(7/12 Pages) PHILIPS

부품명	PSMN005

상세설명	N-channel logic level TrenchMOS(TM) transistor

PDF	12 Pages

Scroll/Zoom	100%

제조업체	PHILIPS [NXP Semiconductors]

홈페이지	http://www.nxp.com

Logo

7 / 12 page

October 1999

Rev 1.200

Philips Semiconductors

Product speciﬁcation

PSMN005-55B;

PSMN005-55P

N-channel logic level TrenchMOS(TM) transistor

Fig.13. Typical turn-on gate-charge characteristics.

GS = f(QG)

Fig.14. Typical reverse diode current.

F = f(VSDS); conditions: VGS = 0 V; parameter Tj

Fig.15. Maximum permissible non-repetitive

avalanche current (I

AS) versus avalanche time (tAV);

unclamped inductive load

100

125

150

175

200

225

250

Gate charge, QG (nC)

Gate-source voltage, VGS (V)

ID = 75 A

Tj = 25 C

VDD = 11 V

VDD = 44 V

100

0.001

0.01

0.1

Avalanche time, tAV (ms)

Maximum Avalanche Current, IAS (A)

Tj prior to avalanche = 150 C

25 C

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.1

100

IF/A

VSDS/V

Tj/C =

175

PSMN005 데이터시트(PDF) 7 Page - NXP Semiconductors

PSMN005 데이터시트(HTML) 7 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

데이터시트 다운로드

링크 URL