ADRF5021BCCZN-R7 datasheet(5/12 Pages) AD

5 / 12 page

Data Sheet

ADRF5021

Rev. A | Page 5 of 12

ABSOLUTE MAXIMUM RATINGS

For recommended operating conditions, see Table 1.

Table 2.

Parameter

Rating

Supply Voltage

Positive

−0.3 V to +5.5 V

Negative

−2.75 V to +0.3 V

Digital Control Input Voltage

−0.3 V to VDD + 0.3 V

RF Input Power1 (f = 1 MHz to 30 GHz,

TCASE = 85°C)

Through Path

27 dBm

Terminated Path

25 dBm

Hot Switching

21 dBm

Temperature

Junction (TJ)

135°C

Storage

−65°C to +150°C

Reflow (MSL3 Rating)

260°C

Junction to Case Thermal Resistance, θJC

Through Path

420°C/W

Terminated Path

160°C/W

ESD Sensitivity

HBM

1 kV (Class 1)

1 For power derating at frequencies less than 1 MHz, see Figure 2 to Figure 4.

Stresses at or above those listed under Absolute Maximum

Ratings may cause permanent damage to the product. This is a

stress rating only; functional operation of the product at these

or any other conditions above those indicated in the operational

section of this specification is not implied. Operation beyond

the maximum operating conditions for extended periods may

affect product reliability.

Only one absolute maximum rating can be applied at any one time.

POWER DERATING CURVES

–14

–12

–10

–8

–6

–4

–2

FREQUENCY (Hz)

10k

100M

10G 30G

100k

10M

TCASE = 85°C

Figure 2. Power Derating for Through Path vs. Frequency, TCASE = 85°C

–14

–12

–10

–8

–6

–4

–2

TCASE = 85°C

FREQUENCY (Hz)

10k

100M

10G 30G

100k

10M

Figure 3. Power Derating for Terminated Path vs. Frequency, TCASE = 85°C

–14

–12

–10

–8

–6

–4

–2

TCASE = 85°C

FREQUENCY (Hz)

10k

100M

10G 30G

100k

10M

Figure 4. Power Derating for Hot Switching vs. Frequency, TCASE = 85°C

ESD CAUTION

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