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ADRF5040BCPZ-R7 데이터시트(PDF) 5 Page - Analog Devices

부품명 ADRF5040BCPZ-R7
상세설명  High power handling
PDF  14 Pages
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ADRF5040BCPZ-R7 데이터시트(HTML) 5 Page - Analog Devices

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Data Sheet
ADRF5040
Rev. A | Page 5 of 14
ABSOLUTE MAXIMUM RATINGS
Table 4.
Parameter
Rating
Positive Supply Voltage (VDD) Range
−0.3 V to +3.7 V
Negative Supply Voltage (VSS) Range
−3.7 V to +0.3 V
Control Voltage (V1, V2) Range
−0.3 V to VDD + 0.3 V
RF Input Power1 (VDD, V1, V2 = 3.3 V, VSS =
−3.3 V, TA = 85°C, Frequency = 2 GHz)
Through Path
34 dBm
Termination Path
28 dBm
Hot Switch Power Level (VDD = 3.3 V,
TA = 85°C, Frequency = 2 GHz)
30 dBm
Storage Temperature Range
−65°C to +150°C
Channel Temperature
135°C
Thermal Resistance (Channel to Package
Bottom)
Through Path
83°C/W
Terminated Path
100°C/W
MSL Rating
MSL3
ESD Sensitivity
Human Body Model (HBM)
4 kV (Class 3)
Charged Device Model (CDM)
1.25 kV
1
For the recommended operating conditions, see Table 1.
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
5
0
–5
–10
–15
–20
–25
0.01
0.1
1
10
100
1k
10k
FREQUENCY (MHz)
Figure 2. Power Derating for Through Path
5
0
–5
–10
–15
–20
0.01
0.1
1
10
100
1k
10k
FREQUENCY (MHz)
Figure 3. Power Derating for Terminated Path
5
0
–5
–10
–15
–20
0.01
0.1
1
10
100
1k
FREQUENCY (MHz)
Figure 4. Power Derating for Hot Switching Power
ESD CAUTION



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