BD179G. datasheet(1/4 Pages) ONSEMI

부품명	BD179G.

상세설명	Plastic Medium-Power Silicon NPN Transistor

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Noember, 2013 − Rev. 15

1

Publication Order Number:

BD179/D

BD179G

Plastic Medium-Power

Silicon NPN Transistor

This device is designed for use in 5.0 to 10 Watt audio amplifiers

and drivers utilizing complementary or quasi complementary circuits.

Features

• High DC Current Gain

• BD179 is complementary with BD180

• These Devices are Pb−Free and are RoHS Compliant*

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector−Emitter Voltage

VCEO

80

Vdc

Collector−Base Voltage

VCBO

80

Vdc

Emitter−Base Voltage

VEBO

5.0

Vdc

Collector Current

IC

3.0

Adc

Base Current

IB

1.0

Adc

Total Power Dissipation

@ TC = 25_C

Derate above 25_C

PD

30

240

W

mW/_C

Operating and Storage Junction

Temperature Range

TJ, Tstg

–65 to +150

_C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction−to−Case

RqJC

4.16

_C/W

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Device

Package

Shipping

ORDERING INFORMATION

3.0 AMPERES

POWER TRANSISTORS

NPN SILICON

80 VOLTS, 30 WATTS

http://onsemi.com

BD179G

TO−225

(Pb−Free)

500 Units/Box

MARKING DIAGRAM

YWW

BD179G

Y

= Year

WW

= Work Week

BD179 = Device Code

G

= Pb−Free Package

3

BASE

1

EMITTER

COLLECTOR

2

TO−225

CASE 77

STYLE 1

3 2 1

유사한 부품 번호 - BD179G.

제조업체	부품명	데이터시트	상세설명
ON Semiconductor	BD179G	86Kb / 4P	Plastic Medium-Power NPN Silicon Transistor July, 2007 - Rev. 12

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BD179G. 데이터시트(PDF) 1 Page - ON Semiconductor

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유사한 부품 번호 - BD179G.

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