AD9364BBCZ datasheet(16/33 Pages) AD

16 / 33 page

Data Sheet

AD9364

TYPICAL PERFORMANCE CHARACTERISTICS

800 MHZ FREQUENCY BAND

Figure 3. Rx Noise Figure vs. Frequency

Figure 4. RSSI Error vs. Input Power, LTE 10 MHz Modulation

(Referenced to −50 dBm Input Power at 800 MHz)

Figure 5. RSSI Error vs. Input Power, EDGE Modulation

(Referenced to −50 dBm Input Power at 800 MHz)

Figure 6. Rx EVM vs. Input Power, 64 QAM LTE 10 MHz Mode,

19.2 MHz REF_CLK

Figure 7. Rx EVM vs. Input Power, GSM Mode, 30.72 MHz REF_CLK (Doubled

Internally for RF Synthesizer)

Figure 8. Rx EVM vs. Interferer Power Level, LTE 10 MHz Signal of Interest with

PIN = −82 dBm, 5 MHz OFDM Blocker at 7.5 MHz Offset

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

700

750

800

850

900

FREQUENCY (MHz)

–40°C

+25°C

+85°C

–3

–2

–1

–100

–90

–80

–70

–60

–50

–40

–30

–20

–10

INPUT POWER (dBm)

–40°C

+25°C

+85°C

–3

–2

–1

–110 –100

–

INPUT POWER (dBm)

–40°C

+25°C

+85°C

–45

–40

–35

–30

–25

–20

–15

–10

–5

–75

–70

–65

–60

–55

–50

–45

–40

–35

–30

–25

INPUT POWER (dBm)

–40°C

+25°C

+85°C

–45

–40

–35

–30

–25

–20

–15

–10

–5

–90

–80

–70

–60

–50

–40

–30

–20

–10

INPUT POWER (dBm)

–40°C

+25°C

+85°C

–30

–25

–20

–15

–10

–5

–

INTERFERER POWER LEVEL (dBm)

–40°C

+25°C

+85°C

Rev. C | Page 15 of 32

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